Several techniques can be applied to characterize redox properties of wide bandgap semiconductors, however some of them are of limited use. In this paper we propose a new modification of the old spectroelectrochemical method developed two decades ago. A procedure based on measurements of the reflectance changes as a function of potential applied to the electrode coated with the studied material appears to be a very convenient tool for characterizing redox properties of semiconductors, forming either transparent or opaque films at a platinum electrode. A discussion on the measured redox parameters of semiconductor films concludes with a definition of a new term, the absorption onset potential of the material.