We report on the observation of the Shubnikov–de Haas oscillation in a polycrystalline ZnO/CdO heterostructure grown on a silicon substrate by a spray pyrolysis technique in temperatures below 6 K. From the analysis of these quantum oscillations, we obtained the cyclotronic effective mass, the 2D carrier concentration, and the thickness of the two-dimensional electron gas in the interface of the two layers. The results suggest that a two-dimensional electron gas is successfully obtained at the ZnO/CdO interface.
We present a systematic investigation of the morphological and magnetotransport properties of Zn1− xCd xO/CdO heterostructures managing the electronic barrier by changing x values between [Formula: see text] and [Formula: see text]. From physical parameters such as roughness and crystallite size obtained through scanning electron microscopy and x-ray diffraction, we established a correlation between the disorder degree and the amplitude of the negative magnetoresistance as well as the nature of the dominating inelastic scattering mechanisms. The magnetoresistance measurements revealed a negative amplitude for all heterostructures, which clearly shows that the weak localization effect is observed in the low temperature range. Applying the three-dimensional weak localization theory (Kawabata 3D), we extract the phase coherence length, and a relatively large value (maximum reaches 135 nm at 4.2 K) is obtained for the Zn0.05Cd0.95O/CdO heterostructure.
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