A simple relation between microhardness HV and the energy of formation WS of Schottky defects in alkali halides is developed. Microhardness HV is calculated from the known values of WS for all the alkali halides.
Articles you may be interested inEvidence for dislocation damping coefficient increases during gamma ray irradiation of sodium chloride and potassium chloride single crystals Discrepancies arising in the number and positions of the etch pits on the opposite cleavage faces when cleavage takes place at different positions from the branching and bending points have been discussed. Experimental evidence for these discrepancies is presented by the help of a new etchant consisting of methanol as solvent and CdCb as poison developed for NaCI crystals. Using this etchant which has the unique property of producing etch pits associated with beaks at the aged dislocations, actual branching of dislocations occurring inside the crystal, shift in the positions of the corresponding etch pits on the opposite cleavage faces due to bending of dislocations near the cleavage plane, etch pits associated with wings, and solution channels arising due to dislocation half-loops have been recorded.
The stress‐optic coefficients or Brewster constants C'λ001 and C'λ110 of mixed crystals of KClKBr are measured in the wavelength range 3000 to 6200 Å using a modified Filon method. The percentage dispersion of C'λ001 and C'λ110 increases with increasing KBr content, reaches a maximum around equimolar concentration, and finally falls off to the value of pure KBr. Also, at a given wavelength, the C'λ vary nonlinearly with the composition of the mixture, the deviation being larger in the ultraviolet.
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