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Abslruct-In this letter, a novel 0-SiClSi heterojunction backward diode has been developed successfully. The developed new backward diode is somewhat different from a conventional one. The &Sic thin film was grown by a low pressure rapid thermal chemical vapor deposition (LP-RTCVD) using a Si& -CsHs -H2 gas system. Its current-voltage characteristics under different operation temperatures (25-200" C) have been measured. In addition, the curvature coefficient -y has also been calculated and it is found to be insensitive to temperature variation up to 180" C.The operation temperature is the highest reported thus far, to our knowledge.

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