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This work describes a detector‐fixed method in which X‐ray photons are collected on different points of the sensitive area of the detector without movement of the detector and which is suitable for measuring a single‐crystal orientation using (ω, ϕ) rotations. This method was used to determine the orientation of a silicon wafer whose (100) plane makes a small angle (misorientation angle) with the surface. ω scans of the 400 reflection were measured as a function of ϕwhile χ and 2θ were fixed at 0 and 69°, respectively.