The time-differential perturbed-angular-correlation technique has been used to investigate the temperature dependence of the electric-field gradient (EFG) at Cd impurities in the semiconducting compound In2Se3. Between room temperature and the melting point, four different phases could be observed. Most crystal structures which have been proposed for the a and P phases are shown to be incorrect. The P' phase (550 -720'C) has not been reported previously. The data suggest that the P phase may be a Peierls distortion of the P' phase. The EFG in the a phase is well described by a simple point-charge model suggesting that the electronic part of the EFG in a-In&Se3 is small.
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