Lattice constants and electro-optic constants have been measured on proton-exchanged LiNbO3 single crystals by means of the x-ray rocking curve method and the phase modulation technique to examine the relationship between the refractive index and the strain, and the degradation of the electro-optic effect.
Although attractive features of fully depleted mode transistors have already been clarified [1,21, essential roles of the fully depleted mode itself in improved performance of digital circuits have not been shown clearly [3]. In this study, we examined such parametas the propagation delay time and power consumption of 035pm CMOS/SIMOX gates (inverter, 24NAND, 24NOR) composed of fully depleted
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