Nonlinearity of the piezoresistance effects in p- and n-type silicon was measured at room temperature for three surface impurity concentrations and for three crystallographic orientations <100≳, <110≳, and <1̄1̄2≳. Piezoresistance coefficients up to third order in stress were obtained experimentally. Uniaxial stresses up to about 174 MPa were applied with currents flowing either parallel (longitudinal configuration) or perpendicular (transverse configuration) to them. A complete set of nine independent second-order tensor components was determined. The second-order piezoresistance coefficients in various configurations of uniaxial stress, current, and crystallographic orientation were calculated by the sixth rank tensor transformation. The nonlinear piezoresistance effect in n-type silicon was discussed with the many-valley model.

a b s t r a c tWe have been developing a novel radiation-tolerant n þ -in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out (Y. Unno).Nuclear Instruments and Methods in Physics Research A 765 (2014) 80-90 n þ -in-p P-type Radiation-tolerant HL-LHC PTP together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.

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MPPC is a novel solid-state photon counting device, which composed of Geiger-mode APD and quenching resistor. We released three kinds of pixel number of MPPC, which have 1600, 400 and 100 pixels. The basic characteristics are promising as a photon counting purpose, but existence of after-pulse and cross-talk are realized in these days [1]. We did rough measurement for these parameters. The recovery time of MPPC is determined by the value of quenching resistance and pixel capacitance. We irradiated the MPPC with high rate light pulse using by picosecond light pulser, and confirmed that the MPPC can output full height pulse after pulse length. We developed the enhanced active area type, array type and new package type MPPCs. The 3 x 3 mm type MPPC (3600pixels) achieved 13% of energy resolution (FWHM).