K. Yamashita scite author profile

Low sheet resistance and extremely shallow profiles are achieved by plasma doping with low process damage and high activation efficiency. High performance pMOSFETs have been also fabricated by taking advantage of wellcontrolled plasma doped extensions.Linear transconductance (Gm) of the pMOSFET with plasma doped extensions is about 30% larger than that of 10 keV ion implanted device with same source/drain junction depth.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

K. Yamashita

A novel long-period stacking/order structure in Mg-Ni-Y alloys

HiSIM: a MOSFET model for circuit simulation connecting circuit performance with technology

A 0.05 μm-CMOS with ultra shallow source/drain junctions fabricated by 5 keV ion implantation and rapid thermal annealing

Impurity-profile-based threshold-voltage model of pocket-implanted MOSFETs for circuit simulation

Shallow source/drain extensions for pMOSFETs with high activation and low process damage fabricated by plasma doping

Contact Info

Product

Resources

About