This paper introduces a novel silicon controlled rectifier (SCR)-based device for ESD power clamp and I/O clamp. The device obtained the high holding voltage and low triggering voltage by adding a p-drift junction and n-well in the cathode region. These characteristics enable latch-up immune normal operation as well as superior full chip ESD protection. The proposed device is designed by compatible 0.35um BCD(Bipolar-CMOS-DMOS) technology. We investigated electrical characteristic by measurement and TCAD simulation. In the measurement result, the proposed device has triggering voltage of 12.8V and holding voltage of 10V. The proposed device has high holding voltage as well as high robustness and second breakdown current. (It2=67.4mA/um)

The high efficiency power management IC(PMIC) with switching device is presented in this paper. PMIC is controlled with PWM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS(DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increases, resulting in a much higher current handling capability than standard MOSFET. The control parts in Buck converter, that is, PWM control circuits consist of a saw-tooth generator, a band-gap reference circuit, an error amplifier and a comparator circuit as a block. The Sawtooth generator is made to have 1.2 MHz oscillation voltage(VDD:3.3V). The comparator is designed with two stage OP amplifier. And the error amplifier has 70dB DC gain and 64° phase margin . DC-DC converter, based on Voltage-mode PWM control circuits and low on-resistance switching device, achieved the high efficiency near 95% at 100mA output current. And DC-DC converter is designed with Low Drop Out regulator(LDO regulator) in stand-by mode which fewer than 1mA for high efficiency.

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