been applied and integrated with the complementary metal-oxide-semiconductor manufacturing processes. [2] As the memory devices are kept scaling down, due to the limitation of charge-based devices such as the amount of storage and the reduction of the capacitance, [3] several kinds of noncharge-based device physics were proposed in the last decade. Resistive switching random access memory (ReRAM), one of these candidates for the next-generation nonvolatile memories, has been achieved the market requirement because of its advantages. [4] In recent years, many kinds of research have shown that ReRAM works with high switching speed [5] (<10 ns), low power consumption, [6] and large endurance cycles [7] (>10 12 cycles). The configuration consisting of merely metal-insulator-metal (M-I-M) layer to integrate ReRAM devices into 2D or even 3D crossbar array architectures is technically achievable. [8,9] The transitional metal oxides, such as TiO x , [10] TaO x , [7] and HfO x , [5] are widely selected for the sandwiched insulating layer in the redox-based ReRAM. On the other hand, active metals such as Ag and Cu to operate the device as a cation-based one are also commonly used. In both of the ReRAM devices, the switching mechanisms result from the migration of the Resistive switching random access memory (ReRAM) has recently generated significant interest due to its potentials used in nanoscale logic, memory devices, and neuromorphic applications. From the device physics, a uniform dielectric layer is necessary to access as the main switching layer to perform stable resistive switching. This, however, makes the fabrication process more challenging. In this regard, a design of resistive switching memory by an in situ current-induced oxidization process on a single crystal metallic nanowire (NW) is demonstrated where a single crystal Cu NW is found as the best material with stable switching behaviors after the in situ current-induced oxidization process. With the in situ current-induced oxidization process by high current density on the Cu NW, a reversible resistive switching up to 100 cycles with a large ON/OFF ratio of >10 3 and a low switching voltage of <0.5 V can be obtained. The initial current-induced oxidation provides a core-shell (Cu 2 O/Cu) nanowire structure that contributed to the switching properties. The possible switching mechanisms and potential guidelines are systematically proposed. The current work opens up the opportunities to design the ReRAM device with full-metallic materials.

It makes possible that it can do basic uncertain inference and directly read/write some table contents of MySQL database with improved ESTA 4.5 (Expert System Shell for Text Animation) based on Visual Prolog 6.3 and Windows, namely adding some uncertain inference functions and some interaction functions with MySQL to the ESTA. It put forward also an uncertain inference method in the ESTA 4.5 based on Visual Prolog 5.2 and Web. It had designed and implemented a condition evaluation expert system of substation DC (Direct Current) system based on the improved ESTA and the enterprise standards (Q/GDW 607-2011) of State Grid. The test shows that the uncertain inference of improved ESTA has feasibility, the interaction with MySQL simplifies some rules of writing and enhances flexibility of it, and the expert system is effective and practical.