No abstract

We have performed transmission electron microscopy (TEM) observation of antiphase structures in a periodically inverted GaAs/Al 0.1 Ga 0.9 As waveguide fabricated on a (100) GaAs substrate intentionally misoriented toward ½0 11 by 2°. We have unambiguously confirmed that the artificial (011) boundaries between the inverted and noninverted domains are of antiphase nature by TEM observations including conventional dark-field imaging and a two-beam technique. We also investigated unintentionally formed self-annihilating non-inverted GaAs domains grown on a Ge interlayer introduced for growing inverted GaAs epilayers using the sublattice-reversal epitaxy technique.

No abstract