The authors report on the solution-processed planar bottom-contact (pBC) organic thin-film transistors and contact effect on gate threshold voltage incorporating regioregular poly(3-hexylthiophene) active layer. By employing pBC configuration, the transistors on SiO2∕Si without surface modification show much higher mobility, lower threshold voltage, and narrower dispersion of threshold voltage when compared to the conventional bottom-contact counterparts. The high mobility and lower threshold voltage are attributed to an improved contact at the interface between the source/drain electrodes and the poly(3-hexylthiophene) active layer.
An application of the domain wall (DW) to a data coding scheme in spin wave (SW) based logic devices is numerically investigated with micromagnetic simulations. Ferromagnetic nanowires with the perpendicular magnetization are assumed as self-biasing SW guides. The inductive output voltage for the superposed spin wave packets, emitted with the pulsed microwave currents, are manipulated with the SW phase shift caused by the interaction with the DW. The binary logic inputs are coded with the existence ("1") or absence ("0") of the DW at the pinning sites defined by local modulation of the perpendicular anisotropy in ferromagnetic nanowires. The exclusive-or (EXOR) logic operation is successfully demonstrated with an order of different output signal level for the logic input of "00 (11)" and "01(10)", encoded by DWs in a nanowire with lateral dimension of 100 Â 100 Â 2560 nm 3 .
A theoretical analysis is made for two kinds of noise reduction methods of timing belts. The methods are confirmed experimentally in a companion paper [1]. Modeling the traveling belt as a string with parametric excitation in tension and density, we obtain an approximate solution for the amplitude of the transverse vibration and carry out some numerical computations for the response of the belt. It is shown that the maximum amplitude of the transverse vibration at resonance is reduced by the two kinds of parametric excitation. The method of variable tension suppresses the maximum amplitude almost for all modes of vibration at resonance and that of the variable density is effective for higher modes except the first mode at resonance.
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