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Approximately 30 nm thick MoO 3ˆl ms were deposited on glass or polycarbonate substrates by Pulsed Laser Deposition Method using ArF excimer laser (l＝193 nm). Forˆlms deposited on glass substrates, transmittance change between the as-deposited and the annealed (340°C for 10 min) states was about 40 at the wavelength of 405 nm. This increase in transmittance was presumably caused by a transformation of oxygen-deˆcient as-deposited state into oxygen-su‹cient annealed state through an annealing-induced reaction involving oxygen absorption, which was conˆrmed by XRD spectra. The value of CNR for 30 nm thickˆlm grown on polycarbonates was about 50 dB at the write power of 3.0～11.0 mW. The value of CNR for 30 nm thickˆlm with the protection layer of 30 nm was 50 dB at the peak power of 9.0～17.0 mW. These results give a characteristic feature of the wide write-power margin. . は じ め に

Approximately 30 nm thick ironˆlms were deposited using an iron target with a high purity of 5 nine on glass or polycarbonate substrate by radio-frequency magnetron sputtering, in order to use for media of the write-once disk. The transmittance change between the as-deposited state and the annealed state (500°C×10 min) was about 18 at the wavelength of 400 nm. For theˆlms on the polycarbonate substrate, the CNR of 42 dB was obtained at a peak power of 8 mW (at l＝406 nm, NA＝0.65). On this time, we observe recording pits (diameter of about 0.26 mm) written at the peak power of 10 mW.