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Ge microcrystals were successfully doped into SiO2 glass films by the rf magnetron sputtering technique. The dependence of the average size of Ge microcrystals on substrate temperature and annealing time was discussed. The optical absorption spectra of Ge microcrystals clearly exhibited the blue shift compared with a bulk Ge crystal, which seems to be due to a quantum size effect.

Semiconductors such as CdTe, CdSe and GaAs, microcrystallites could be successfully doped into SiO2-glass films by the magnetron rf-sputtering technique. The average size of the microcrystallites depended on sputtering conditions, and postannealing was not necessary to form microcrystallites in the silica-glass films. The average diameter varied from below 15 A to 62 A. In the optical absorption spectra, the absorption edge of the films clearly exhibited blue shift compared to each bulk semiconductor, and thus the quantum size effect could be found in these microcrystallites.

The design and operation of a CO:! laser based on a glow discharge in a metal tube is described. Up to 15 W power was obtained. The operating voltage is low compared with a similar discharge in an insulating tube.