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Vanadium dioxide (VO 2 ) thin films have unique insulator to metal transition above the critical temperature of 72 ºC. In this research, VO 2 thin films were deposited on a sapphire substrate for thermally controllable RF/microwave switching devices with integrated heating coil. The VO 2 thin film based devices showed insulator performance at room temperature and metallic state (low resistive phase) at 80 ºC. Switching devices designed using a VO 2 series varistor showed good isolation (< -30 dB) and low insertion loss (> -5 dB) up to 20 GHz.

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