Single layer MoS2 is an ideal material for the emerging field of "valleytronics" in which charge carrier momentum can be finely controlled by optical excitation. This system is also known to exhibit strong many-body interactions as observed by tightly bound excitons and trions. Here we report direct measurements of valley relaxation dynamics in single layer MoS2, by using ultrafast transient absorption spectroscopy. Our results show that strong Coulomb interactions significantly impact valley population dynamics. Initial excitation by circularly polarized light creates electron-hole pairs within the K-valley. These excitons coherently couple to dark intervalley excitonic states, which facilitate fast electron valley depolarization. Hole valley relaxation is delayed up to about 10 ps due to nondegeneracy of the valence band spin states. Intervalley biexciton formation reveals the hole valley relaxation dynamics. We observe that biexcitons form with more than an order of magnitude larger binding energy compared to conventional semiconductors. These measurements provide significant insight into valley specific processes in 2D semiconductors. Hence they could be used to suggest routes to design semiconducting materials that enable control of valley polarization.
The motions of electrons in solids may be highly correlated by strong, long-range Coulomb interactions. Correlated electron-hole pairs (excitons) are accessed spectroscopically through their allowed single-quantum transitions, but higher-order correlations that may strongly influence electronic and optical properties have been far more elusive to study. Here we report direct observation of bound exciton pairs (biexcitons) that provide incisive signatures of four-body correlations among electrons and holes in gallium arsenide (GaAs) quantum wells. Four distinct, mutually coherent, ultrashort optical pulses were used to create coherent exciton states, transform these successively into coherent biexciton states and then new radiative exciton states, and finally to read out the radiated signals, yielding biexciton binding energies through a technique closely analogous to multiple-quantum two-dimensional Fourier transform (2D FT) nuclear magnetic resonance spectroscopy. A measured variation of the biexciton dephasing rate indicated still higher-order correlations.
Fullerene-free organic solar cells show over 11% power conversion efficiency, processed by low toxic solvents. The applied donor and acceptor in the bulk heterojunction exhibit almost the same highest occupied molecular orbital level, yet exhibit very efficient charge creation.
Three-dimensional (3D) hybrid organic−inorganic lead halide perovskites (HOIPs) feature remarkable optoelectronic properties for solar energy conversion but suffer from longstanding issues of environmental stability and lead toxicity. Associated two-dimensional (2D) analogues are garnering increasing interest due to superior chemical stability, structural diversity, and broader property tunability. Toward lead-free 2D HOIPs, double perovskites (DPs) with mixed-valent dual metals are attractive. Translation of mixed-metal DPs to iodides, with their prospectively lower bandgaps, represents an important target for semiconducting halide perovskites, but has so far proven inaccessible using traditional spacer cations due to either intrinsic instability or formation of competing non-perovskite phases. Here, we demonstrate the first example of a 2D Ag−Bi iodide DP with a direct bandgap of 2.00(2) eV, templated by a layer of bifunctionalized oligothiophene cations, i.e., (bis-aminoethyl)bithiophene, through a collective influence of aromatic interactions, hydrogen bonding, bidentate tethering, and structural rigidity. Hybrid density functional theory calculations for the new material reveal a direct bandgap, consistent with the experimental value, and relatively flat band edges derived principally from Ag-d/I-p (valence band) and Bi-p/I-p (conduction band) states. This work opens up new avenues for exploring specifically designed organic cations to stabilize otherwise inaccessible 2D HOIPs with potential applications for optoelectronics.
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