Nano-engineered 3C-SiC thin films, which possess columnar structures with high-density stacking faults and twins, were irradiated with 2 MeV Si ions at cryogenic and room temperatures. From cross-sectional transmission electron microscopy observations in combination with Monte Carlo simulations based on the Stopping and Range of Ions in Matter code, it was found that their amorphization resistance is six times greater than bulk crystalline SiC at room temperature. High-angle bright-field images taken by spherical aberration corrected scanning transmission electron microscopy revealed that the distortion of atomic configurations is localized near the stacking faults. The resultant strain field probably contributes to the enhancement of radiation tolerance of this material.

a b s t r a c tSilicon carbide (SiC) with a high-density of planar defects (hereafter, 'nano-engineered SiC') and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. It was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due to the local increase in electronic energy loss that enhanced dynamic recovery.

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In this study, the effect of die edge radius on crack initiation was discussed in finish blanking. Experiments were carried out using die with rounded cutting edge. As a result, it was confirmed that crack initiation near the punch edge occurred earlier than that near the die edge. It was also confirmed that the burnished surface increased with an increase in the die edge radius. Finite element method was carried out from the initial stage of shearing and until the punch penetration depth was achieved just before the occurrence of the cracks to investigate the distribution of the mean stress. As a result, it was confirmed that the punch stroke, where the mean stress began to increase rapidly to a positive value, increased with an increase in the die edge radius, and the punch stroke at which the mean stress increased rapidly also increased.