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In this study, flexible transparent heaters with heating films made of indium tin oxide (ITO) are fabricated on plastic substrates. The optical transmittance of a representative flexible heater is above 90% in the visible and near infrared regions. The steady-state temperature is determined by the bias voltage and reaches about 180 degrees C at a bias voltage of 50 V. The heat-generating properties are nearly the same before and after the application of tensile strain. Furthermore, the defrosting ability is demonstrated using a block of dry-ice.

This letter describes a process for the preparation of high-quality tantalum oxynitride (TaOxNy) via NH3 annealing of Ta2O5, for use in gate dielectric applications. Compared with tantalum oxide (Ta2O5), a significant improvement in the dielectric constant was obtained by the NH3 treatment. In addition, light reoxidation in a wet ambient at 450 °C resulted in a significantly reduced leakage current. We confirmed nitrogen incorporation in the tantalum oxynitride (TaOxNy) by Auger electron spectroscopy. By optimizing the nitridation and reoxidation processes, we obtained an equivalent oxide thickness as thin as 1.6 nm and a leakage current of less than 10 mA/cm2 at −1.5 V.

Oxide TFTs have a negative threshold voltage (V th ), which can become even more negative in response to DC or AC stress. Therefore, these voltage stresses can cause severe leakage current in a scan driver. In this paper, a scan driver with dynamic threshold voltage control (DTVC) is proposed to minimize the leakage current and enlarge operating margin. Effectiveness of DTVC was verified with a 14-inch AMOLED. .