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Increasing image quality in thin‐film transistor liquid crystal displays (TFT‐LCD) is a recognized challenge for electronic companies and specialists working in this area. One of the main problems in TFT‐LCDs is a phenomenon called “light leakage”, affecting black–white contrast and color brightness. It occurs because of a heat‐induced shrinkage and disorientation of the polarizing film of TFT‐LCD, which controls the intensity of the light from the backlight unit. Improvement of the light leakage can be achieved through using a pressure‐sensitive adhesive (PSA) used for assembling the polarizing film onto the TFT‐LCD panel. In this paper, eight acrylic/methacrylic monomers with high glass transition temperature (Tg) were employed for synthesis of the polymers for the adhesive. Effect of structure, Tg, and elasticity modulus of the synthesized polymers on the light leakage was investigated simultaneously for 2.5‐ and 7.0‐in. size samples. We demonstrated that the light leakage can be minimized through two different mechanisms—high stress relaxation of the polymers with low Tg and low modulus and high shrinkage resistance of the polymers with high Tg and high modulus. The results of this work indicate a possibility to develop a universal PSA for polarizing film in TFT‐LCDs of different sizes that will have a positive effect on manufacturing productivity and lowering prices of digital devices. Copyright © 2011 John Wiley & Sons, Ltd.

Black matrix in liquid crystal displays plays important parts such as blocking the light leakage and enhancing the contrast ratio among the RGB pixels. In this paper, the authors describe new multi-functional monomers that may be used in black matrix to enhance the sensitivity of photo-resist.

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The trend in the development and manufacturing of Complementary Metal Oxide Semiconductor (CMOS) image sensors is to miniaturize pixels on the chips and hence to improve their imaging characteristics by providing a higher image resolution. As CMOS technology scales down into submicron regions, the conventional color filters are no longer suitable for generating the desired optical density. The major drawback of the conventional color filters produced from pigment-based positive tone photosensitive compositions, is the heterogeneous dispersion of pigments in photoresist composition resulting in color irregularities due to coarse particles of the pigments. One of the most perspective ways to solve this problem is a replacing the pigment with a dye as a coloring agent and thus, increasing solubility of the latter to obtain a homogeneous colored photoresist composition. In this paper, several novel red dye-containing materials are synthesized and tested to provide a redcolored photosensitive composition. This red-colored photosensitive composition is very promising for application as color filters for CMOS image sensors with high resolution and high level of integration architecture.