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Diamond film thermistors were fabricated from polycrystalline diamond films grown on sintered Si3N4 by microwave plasma chemical vapor deposition. An undoped diamond layer and a zigzag or rectangular pattern of B-doped semiconducting diamond were successively deposited by a selected-area deposition technique. For ohmic electrodes, a Ti/Au bilayer was used. The resistance-temperature characteristics were measured from room temperature to 300 °C. It was found that the temperature coefficient of a diamond film thermistor with a B-doped diamond layer grown using 0.1 ppm B2H6 as dopant gas was higher than those of platinum resistive temperature detectors and SiC film thermistors.

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