Studies of the crystallization of the free surface of p-azoxyphenetole (PAP) show that for a surface supercooling greater than about 3-6°C anomalously fast crystallization takes place. Typical propagation speeds are 10-15 cm s−1, compared with only a few mm s−1 for less supercooling. p-azoxyanisole (PAA) does not appear to show the fast crystallization even when supercooled as much as 12°C.

CD uniformity is one of the most critical parameters for mask making today. The mask error factor (MEF) in lithography for features that are smaller than the stepper wavelength means that any CD error is transferred to the wafer to a greater extent than the stepper reduction factor would indicate. CD results form a new laser pattern generator, the Omega6000 product line, will be presented. The system features an acousto-optic deflection architecture specifically designed to meet the CD requirements of 180 nm photomasks. A 0.86 NA final lens provides the high resolution ofthe system. The CD control and the high resolution makes the system well suited for today's advanced photomasks.

The spectrum of light scattered inelastically from the nematic liquid crystal p-azoxyphenetole has been studied by optical-mixing spectroscopy. The experimental results support recent hydrodynamic theories of fluctuations in nematic liquid crystals. The unknown Frank elastic constants K2 and K3 (in CGS units) have been determined to be 6·1 × 10−7 ±15% and 17·2 × 10−7 ±25%, respectively.

Abstract— One of the most critical areas in the manufacturing process for FPD panels or shadow masks for CRTs is lithography. Most existing lithography technologies require high‐quality large‐area photomasks. The requirements on these photomasks include positioning accuracy (registration) and repeatability (overlay), systematic image quality errors (“mura” or display quality), and resolution (minimum feature size). The general trend toward higher resolution and improved performance, e.g., for TFT desktop monitors, has put a strong focus on the specifications for large‐area‐display photomasks. This article intends to give an overview of the dominant issues for large‐area‐display photomasks, and illustrates differences compared with other applications. The article will also present state‐of‐the‐art methods and trends. In particular, the aspects of positioning accuracy over large areas and systematic image‐quality errors will be described. New qualitative and objective methods have been developed as means to capture systematic image‐quality errors. Results indicating that errors below 25 nm can be found early in the manufacturing process is presented, thus allowing inspection for visual effects before the actual display is completed. Positioning accuracy below 400 nm (3 sigma) over 720 × 560 mm have been achieved. These results will in the future be extended up toward 1 × 1 m for generation 4 in TFT‐LCD production.