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A nonvolatile memory effect exhibited by electric field-induced resistance switching has been the topic of intense research not only due to its applications as resistive random access memory but also from the basic physics point of view. Among several binary and ternary mixed oxide compounds, the ones which possess magnetic ions have shown a great promise. Spinel ferrite system Zn 0.3 Mn 0.7+x Si x Fe 2−2x O 4 with varying x is investigated for its novel electrical switching properties. Both temperature and applied voltage dependence of current-controlled negative resistance-type electrical switching showed better than 200% of resistive switching ratios. Bulk polycrystalline samples showed composition x dependence of resistive switching. The current-voltage characteristics are modeled for low and high applied field regime, and the presence of space-charge-limiting current is confirmed. Thin films of the ferrite system grown by pulsed laser deposition showed almost nonexistence of resistive switching, suggesting that the bulk composition of the compound has a major role to play against the film-electrode interface.

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