Good Ohmic contacts to P−doped and undoped p−type CdTe have been obtained by evaporating Au or Pt on the surfaces in high vacuum (p<1×10−6 Torr) and firing these in a H2 atmosphere. This contact has been used on the crystals having carrier concentrations between 3×1014 and 3×1017 cm−3 and stayed nearly Ohmic down to 4 °K. Consequently, temperature dependences of Hall coefficients and resistivities have been measured and an impurity conduction has been found in the P−doped CdTe.

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