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This paper presents a 0.6-6.2 GHz wideband CMOS low noise amplifier (LNA) for multi-band application. The LNA design is based on a common source (CS) cascade amplifier with resistive feedback, gate inductive peaking, and source degeneration inductive topologies to realize the matching networks for broadband operation. The authors also derived the formula of the input and output impedances those help to select proper values of biasing and matching elements. The LNA achieves a peak gain S 21 of 11.61 dB, a noise figure (NF) of 5.28 to 5.82 dB at frequency from 0.6 to 6.2 GHz, and an input thirdintercept point (IIP3) of -2.55 dBm at 2.5 GHz under DC power of 8.45 mW from a 1.5 V supply voltage. The figure-of-merit (FOM) for wideband LNA is up to 0.51 at 2.5 GHz. The LNA is fabricated in tsmc TM 0.18-m RF CMOS technology with a chip area of 0.8 mm 2 .Index Terms -gate inductive peaking, resistive feedback, source degeneration inductive topologies, wideband LNA.

A K-band on-off keying (OOK) receiver implemented in tsmc TM 90 nm CMOS process is proposed. The proposed OOK receiver consists of a two-stage wideband low-noise amplifier, a single-to-differential envelop detector with RC lowpass filter and a 62.6 dB three-stage variable gain amplifier and DC offset compensation circuit. The OOK receiver achieved a sensitivity of −47.6 dBm at 600 Mbit/s data rate under a pseudo-random binary sequence 2 9-1 pattern. The receiver consumes a low power of 9.5 mW, which minimum average power is only 15.86 nW at the input power of −47.6 dBm. The chip area including test pads is 1 × 0.81 mm 2 .

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