By inserting a very thin layer of Ag between two layers of amorphous indium zinc tin oxide (IZTO), we fabricated a highly flexible, low resistance, and highly transparent IZTO-Ag-IZTO multilayer electrode on a polyethylene terephthalate (PET) substrate. Due to surface plasmon resonance (SPR) effects and the ductility of the Ag layer, the IZTO-Ag-IZTO electrode exhibited a low sheet resistance of 4.99Ω∕sq. and a high transparency of 86% as well as superior flexibility despite the very thin thickness of the IZTO layer (30nm). It was found that the transition of the Ag layer from distinct islands to a continuous film occurred at a critical thickness (∼14nm). Continuity of the Ag film is very important for SPR in IZTO-Ag-IZTO electrode. The current density-voltage-luminance characteristics of flexible organic light emitting diodes (OLEDs) fabricated on IZTO-Ag-IZTO/PET were better than those of flexible OLEDs fabricated on an ITO/PET substrate due to the low sheet resistance and high work function of the IZTO.

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Ti contact properties and their electrical contribution to an amorphous InGaZnO (a-IGZO) semiconductor-based thin film transistor (TFT) were investigated in terms of chemical, structural, and electrical considerations. TFT device parameters were quantitatively studied by a transmission line method. By comparing various a-IGZO TFT parameters with those of different Ag and Ti source/ drain electrodes, Ti S/D contact with an a-IGZO channel was found to lead to a negative shift in V T (ÀD 0.52 V). This resulted in higher saturation mobility (8.48 cm 2 /Vs) of a-IGZO TFTs due to effective interfacial reaction between Ti and an a-IGZO semiconducting layer. Based on transmission electron microcopy, x-ray photoelectron depth profile analyses, and numerical calculation of TFT parameters, we suggest a possible Ti contact mechanism on semiconducting a-IGZO channel layers for TFTs. V

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