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The bias conditions for the HEMT are V DS 5 3 V, V g 5 20.5 V, and I DS 5 40 mA. With these bias conditions, low noise, stability, and high stable gain properties for the proposed LNA can be obtained. CONCLUSIONIn this letter, a new low noise amplifier (LNA) using a CRLH metamaterial was suggested. The advantages of the proposed LNA include low noise, high maximum stable gain, and compact size.The CRLH with distributed elements has a compact size in the input and output matching networks at LNA. The proposed LNA has a compact size, low cost, and possibility of mass production. A HEMT is adopted as an active device due to its low noise and high stable gain properties. The proposed LNA can be fabricated using a micro/nano-semiconductor process such as a monolithic microwave integrated circuit (MMIC) due to its planar structure. It can be applied to an L-band wireless communication system. ACKNOWLEDGEMENTABSTRACT: This letter presents the design and measurement of high OIP3, low flicker noise double-balanced Gilbert cell down conversion input at 2.4 GHz.

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