Since Klaus Schwab and the World Economic Forum declared the arrival of the Fourth Industrial Revolution, there has been much discussion about it. However, there is no commonly agreed-upon definition of the Fourth Industrial Revolution. Therefore, we attempted to answer the following four research questions. "What is the definition of the Fourth Industrial Revolution?", "How can we respond to the Fourth Industrial Revolution in terms of institutions?", "How can we respond to the Fourth Industrial Revolution in terms of technology?", "How can we respond to the Fourth Industrial Revolution in terms of firm innovation and start-up strategy?" Brainstorming was conducted by 11 scholars from several countries to answer these four research questions. Therefore, this research is not the end product of four research questions, but a kind of advanced template to answer the four research questions for continuing research.

We created conceptual models that people may use to analyze and forecast the dynamic effects of open innovation, which we applied to the smartphone sector using a model-based analysis approach.

No abstract

No abstract

We have fabricated high-performance and high-stability sol-gel-processed MgInZnO thin films transistors with varying Mg content. As the Mg content was increased, the turn-on-voltage increased and the off-current decreased. This is because the incorporation of Mg (with low standard electrode potential and high optical band gap, Eopt, when oxidized) causes reduction in the oxygen vacancy, acting as a carrier source, and an increase in Eopt of the film. This results in reduction in carrier concentration of the film. Small grains and smooth morphology by varying the Mg content lead to an improvement of the mobility, on-current, and subthreshold gate swing.