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Current-potential scam were used to investigate the electrodeposition of cuprous oxide thin films in an acetate bath. YJe found that a narrow potential domain, from 0 V vs SCE to -300 mV vs SCE, is available for the potentiostatic electrodeposition of cuprous oxide thin films and extension of this domain towards more cathodic potentials will result in theco-deposition of copper. These results were further verified by the X-ray diffraction measurements on the thin films formed by the electrodeposition a t various electrode potentials. Optical transmission studies revealed that electrodeposited cuprous oxide is a direct band gap semiconductor of 2.0 eV.