The degradation and annealing kinetics of both a-Si:H and a-SiGe:H single-junction solar cells were investigated under varying conditions. In every case, the kinetics associated with degradation and annealing were slower for a-SiGe:H cells than for a-Si:H cells. Since deuterium diffusion studies indicate that the hydrogen in our a-SiGe:H films diffuses more slowly than that in the a-Si:H films, hydrogen motion may play a role in determining both the degradation and annealing kinetics of the devices.
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