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We present a method to reduce the size and improve the crystal quality of freestanding nanowires grown by electron beam induced deposition from a platinum metal organic precursor in a dual beam system. By freestanding horizontal growth and subsequent electron irradiation in a transmission electron microscope, sub-10-nm polycrystalline platinum nanowires have been obtained. A combined transmission electron microscopy-electron energy loss analysis has shown that the amorphous carbon, mixed to nanocrystalline platinum in the as-deposited material, is removed from the wires during irradiation. The same treatment progressively transforms nanocrystals dispersed in the amorphous matrix in a continuous polycrystalline platinum wire

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A novel nanofabrication method based on nitrogen passivation by hydrogen in GaAsN is presented. This approach combines a masked hydrogenation process with a very sharp H forefront in GaAsN. This allows embedding a GaAsN nanometer-sized region in a GaAs barrier, resulting in the formation of ordered arrays of nanoemitters with marked zero-dimensional spectroscopic characteristics

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