The parameters of potential well, which arises around inhomogeneities of technological origin in n-InP, have been analyzed using electrical measurements data. Model of spherical space-charge regions surrounding disordered regions was applied for explanation of results and found to be in fair agreement with experimental data. Comparison of experimental data with theoretical computations displays scattering of current carriers due to the disordered regions in n-InP additional to lattice and impurity ions scattering.