No abstract

Ag1-=[(Y20~)0.1(ZrO2)0.9]= (YSZ) cermet thin films have been deposited by reactive magnetron cosputtering from Ag and Zr/Y targets in Ar-O2 mixtures. The deposition conditions were such that the YSZ component in the films was fully oxidized. The film densities varied from =75% to >85% as the total pressure was decreased from 20 to 5 mTorr. Film resistivities p varied with Ag volume fraction fag from 5 • 10 -6 ~3-cm to >109 ~-cm. For fag < 0.4, p decreased rapidly with increasing fag. For fag > 0.4, p decreased more gradually with increasing fag. P in annealed films ranged from 4 • 10 -4 f~-cm for fag = 0.4 to 5 • 10 -6 ~-cm for pure Ag. Long term (>100 h) annealing at -> 700~ resulted in a gradual increase in cermet resistivity due to Ag evaporation and Ag segregation to surface islands. Both decomposition mechanisms were effectively suppressed at up to 750~ by depositing a 1 ~m thick porous perovskite cap layer on the cermet. Complex impedance spectroscopy measurements in air of cermet electrodes on YSZ electrolytes gave interfacial resistances that were a factor of =6 lower than those of pure Ag electrodes, e.g., 1.4 ~-cm 2 at 750~ Ag-YSZ cermets thus have potential as high-conductivity, low-overpotential air electrode materials for solid-oxide electrochemical devices operating at temperatures _<750~ ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-05-16 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-05-16 to IP