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The latest results on the use of porous silicon (PS) as an antireflection coating (ARC) in simplified processing for multicrystalline silicon solar cells are presented. The optimization of a PS selective emitter formation results in a 14.1% efficiency multicrystalline (5 x 5 cm(2)) Si cell with evaporated contacts processed without texturization, surface passivation, or additional ARC deposition. Specific attention is given to the implementation of a PS ARC into an industrially compatible screenprinted solar cell process. Both the chemical and electrochemical PS ARC formation method are used in different solar cell processes, as well as on different multicrystalline silicon materials. Efficiencies between 12.1 and 13.2% are achieved on large-area (up to 164 cm(2)) commercial Si solar cells

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The temperature coefficients of the refractive indices of Ge, Si, InAs, GaAs, InP, GaP, CdSe, ZnSe, and ZnS are\ud measured by a prism technique in spectral ranges of up to X = 1 2 ,um at 15-350 C. Numerical values of equivalent oscillator\ud parameters describing the n(X) dispersion, as well as the high-frequency e and low-frequency eo dielectric\ud constants, are determined with precision. Taking into account the band structure of the above semiconductors, the\ud values dn/dT have been calculated and show good agreement with experimental data

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