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Measurements of field emission current-voltage and Fowler-Nordheim characteristics of Si tips covered by 100 nm-thick Ca& epitaxial layers have been for the first time performed. It was found that in spite of dielectric nature of the coating, the tips demonstrate high emissivity comparable with the diamond coated tips. Results of high resolution photoassisted field emission investigations of C W S i structures are presented.

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Field emission from silicon tips with carbon coatings deposited by VHF CVD at low temperature, Ts=225°C, has been studied. Emission was measured from both single tips and tip arrays. Structure and electronic properties of the films have been characterized. Significant effects due to pregrowth plasma treatment of the sample surface were observed on microstructure and emission characteristics. Optimized carbon coatings on silicon tips increased emission current by about two orders and reduced the threshold field to 0.1 V/μm.