Electroluminescence (EL) intensity from GaN nanostructures is reported as a function of different parameters, such excitation wavelength, number of the nanostructures, applied voltage, temperature and time. Quantum confinement model (QCM) is used to develop the model equation that describes the EL intensity as a function of size of the nanostructures. It is shown that as the number of nanostructures decreases EL intensity increases. The highly efficient EL intensity is obtained at low operating voltage (6V). It is observed that EL intensity decreases as the temperature increases and degrades with time.

The confinement properties of semiconductor nanostructures have promising potential in technological application. The main objective of this study is to describe the dependence of Photoluminescence (PL) intensity on different parameters like temperature, excitation wavelength, time and photon energy of GaAs quantum dots (QDs). The model equations are numerically analyzed and simulated with matlab and FORTRAN codes. The experimental fitted values and physical properties of materials are used as data source for our simulation. The result shows that at low temperature the peak is quite sharp, as temperature increases the PL intensity decreases and get quenched at particular thermal energy.