The experimental results of relaxation kinetics of photoresponse decay signals of vitreous As,Se, samples are presented. The investigation was carried out for the photon energy range close t o the maximum and the shortwave decrease of the spectral distribution curve and for two kinds of surface treatment of the samples. The kinetics of the photoresponse was observed not only t o depend on the exciting light wavelength but rather essentially on the method of surface treatment. The latter dependence correlates with changes in photoconductivity obtained in a previous work [l] under the corresponding methods of treatment.Experimentelle Ergebnisse der Relaxationskinetik des Photoresponseabklingens von glasartigen As,Se,-Proben werden mitgeteilt. Die Untersuchung wurde fur den Photonenenergiebereich in der NLhe des Maximums und des kurzwelligen Abfalls der Spektralverteilungskurve und fur zwei OberflLchenbehandlungsarten der Proben durchgefiihrt. Es wurde beobachtet, daB die Photoresponsekinetik nicht nur von der Wellenlange des Anregungslichtes, sondern auch sehr wesentlich von der Methode der Oberflachenbehandlung abhangt. Diese AbhBngigkeit von der Oberflachenbehandlung entspricht den dnderungen in der Photoleitung, die in einer friiheren Arbeit [l] unter entsprechenden Behandlangsmethoden erhalten wurden.

The results are presented of the investigation of photoconductivity and its spectral‐behaviour as a function of several mechanical and chemical surface treatments of vitreous arsenic selenide. The data obtained indicate a deformation of the spectral distribution curve and an essential decrease of the photoresponse for vitreous samples if their surface was etched in concentrated alkali or mechanically abrased, as compared with samples with polished surface. It is suggested that such changes of photoconductivity are due to the change of the recombination process of nonequilibrium carriers at the surface of the vitreous semiconductor.

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