Indium tin oxide (ITO) films containing different In : Sn atomic ratios, viz. 90 : 10, 70 : 30, 50 : 50, 30 : 70, were deposited on two types of glass substrates by sol-gel spinning technique. XPS analysis of the films was done under as-received and after-sputtering conditions. The narrow spectra obtained for the Na1s, In3d, Sn3d and O1s have been discussed. Oxygen was found to exist in three chemical environments in as-received samples due to the existence of (i) environmental hydroxyl (-OH) group, (ii) crystalline ITO and (iii) amorphous ITO; but it was in two chemical environments, (ii) and (iii), after surface cleaning by sputtering. The presence of both tin metal and tin oxides was confirmed by the peak analysis of Sn3d. The In : Sn atomic ratio taken in the precursor sols did not change considerably in the case of developed films of low Sn content, but considerable change was observed in the films having high Sn content.

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