An epitaxial β-Ga2O3/Ga:ZnO heterojunction based self-powered DUV photodetector with an excellent wavelength selectivity and a high DUV/visible rejection ratio.

Due to the layered structure and thickness-dependent bandgap of MoS2, it is intriguing to investigate the layer-dependent performance of MoS2 based photodetectors.

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Direct growth of uniform wafer-scale two-dimensional (2D) layered materials using a universal method is of vital importance for utilizing 2D layers into practical applications. Here, we report on the structural and transport properties of large-scale few-layer MoS2 back-gated field effect transistors (FETs), fabricated using conventional pulsed laser deposition (PLD) technique. Raman spectroscopy and transmission electron microscopy results confirmed that the obtained MoS2 layers on SiO2/Si substrate are multilayers. The FETs devices exhibit a relative high on/off ratio of 5 × 102 and mobility of 0.124 cm2V−1S−1. Our results suggest that the PLD would be a suitable pathway to grow 2D layers for future industrial device applications.

Ceramic fiber is a kind of fibrous lightweight refractory with many advantages of light weight, thermostability, good heat stability, low thermal conductivity, small specific heat, and resistance to mechanical vibration and so on. As a result of them, it has been used widely in lots of fields, such as machinery, metallurgy, chemical industry, oil, ceramics, glass and electron. From the aspect of the ceramic fiber development, in this essay, the types and preparation methods of ceramic fiber have been listed one by one, and the author focused on analyzing the development trend of ceramic fiber and the application in papermaking industry.