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In this study, we developed a high-performance low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT) incorporating an ultra thin Eu 2 O 3 gate dielectric. High-j Eu 2 O 3 LTPS-TFT annealed at 500 C exhibits a low threshold voltage of 0.16 V, a high effective carrier mobility of 44 cm 2 /V-s, a small subthreshold swing of 142 mV/decade, and a high I on /I off current ratio of 1.34 Â 10 7. These significant improvements are attributed to the high gate-capacitance density due to the adequate quality of Eu 2 O 3 gate dielectric with small interfacial layer of effective oxide thickness of 2.5 nm. Furthermore, the degradation mechanism of positive bias temperature instability was studied for a high-k Eu 2 O 3 LTPS-TFT device. V

We developed a high-k HoTiO3 gate dielectric deposited on Si (100) through reactive cosputtering. They found that the HoTiO3 dielectrics annealed at 800oC exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect due to the formation of well-crystallized HoTiO3 structure and composition.

Abstract:In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H 2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H 2 sintering exhibited a high sensitivity than that without H 2 sintering. This result may be due to the resulting increase in the number of Si-OH 2 + and Si-O − bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems.

Virus-host interaction plays an important role in viral replication. 3A protein of enterovirus A71 (EV-A71) recruits other viral and host factors to form a replication complex, which is important for viral replication. In this investigation, we utilized immunoprecipitation combined with proteomics approaches to identify 3A-interacting factors.