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Running average is a simple and effective background modeling method that generates adaptive background image for moving object detection. Fuzzy Running Average (FRA) improves the selectivity of Standard Running Average (SRA). However, its background restoration rate is slow. This leads to false object detection when a static object becomes dynamic. To overcome this problem, an Extended Fuzzy Running Average (EFRA) is proposed. The results show that the EFRA not only retains the selectivity benefit of FRA, but also improves the restoration rate significantly. Keywords: fuzzy background modeling, vehicle detection, thermograph Classification: Science and engineering for electronics

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Abstract:In this paper, a new technique is proposed for multiplication of two sampled low frequency analog signals and the result is in digital form. Out of the two signals, one signal is fed to the input of typical second order, ΔΣ Modulator (DSM). The operating period of the DSM circuit is varied directly in proportion to the absolute amplitude of the second analog signal. In this case, the average value of the digital output of quantizer is equal to the product of the analog signals in each sampling period. The dynamic range of input signals and the accuracy of proposed multiplier are better than the conventional CMOS multipliers.

Tunnel field effect transistor (TFET) is a potential candidate to replace CMOS in deep-submicron region due to its lower SS (subthreshold swing, <60 mV/ decade) at room temperature. However, the conventional TFET suffers from low tunneling current and high ambipolar current. To overcome these two shortcomings, a new structure, known as Hetero-dielectric gate TFET (HDG TFET), has been proposed in the literature. To analyze the electrical characteristics of this structure, a closed form of analytical expression of current is required. This paper presents the analytical current model for Hetero-dielectric single gate (HDSG) TFET structure without using any iterative method. The developed analytical models show a good agreement with 2-D TCAD simulator results. The model is used to study the electrical behavior of the proposed device under various physical and bias variations.