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Structure and temperature dependence of electrical properties of Ca(Bi,La) 4 Ti 4 O 15 -(Bi,La) 4 Ti 3 O 12 (CBT-BIT-xLa) ceramics were studied. With La 3? doping content increasing, the samples exhibited diffused dielectric constant anomalies, and the Curie temperature (T c ) decreased. Meanwhile, the dielectric loss of CBT-BITxLa was reduced. CBT-BIT-0.8La performed an improved piezoelectric constant (d 33 ) value of 23.4 pC/N and remained until the temperature increased to 500°C. In addition, CBT-BIT-0.8La performed an enhanced q dc value of 3.26 9 10 15 X cm, at room temperature. CBT-BIT-0.8La showed clearly higher dc resistivity (q dc ) than CBT-BIT, even with increasing the temperature to 600°C.

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