Ksurf. 0 = le-6 Ksurf. E = 0; vacan silicon/gas Ksurf. 0 = le-6 Ksurf. E = 0. We have set the value of the recombination constant, not applicable to FINDPRO, Eq.[15]: inter silicon Kr. 0 = le-12 Kr. E = 0; vacan silicon Kr. 0 = le-12 Kr. E = 0. In fitting the data for Fig. 1, the only fitting parameters have been/(i, ~p, Dl~ and the electrically active portion of the total P which we have taken to saturate at 2.5 x 1020 cm-3. We set the solubility of P in SUPREM-IV above this phos ss. temp = 874 ss. conc = le21 We set the transfer coefficient for P from the gas to Si at a high value phos silicon/gas Trn. 0 = le3 Trn. E = 0 Finally, we eliminated the traps from SUPREM-IV trap silicon total = 0 frac. 0 = 0 In both programs the 1-D mesh was set to extend at least to 60 microns, a point at which, for these parameters, I did not increase from its initial equilibrium value I0.
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