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Numerous techniques have been used to improve the voltage handling capability of high voltage power devices with the aim to obtain the breakdown of a plane junction. In this work, a new concept of low cost, low surface and high efficiency junction termination for power devices is presented and experimentally validated. This termination is based on a large and deep trench filled by BCB (BenzoCycloButene) associated to a field plate. Simulation results show the important impact of trench design and field plate width on termination performances. The experimental breakdown voltage of this DeepTrench Termination (DT 2 ) is close to 1300 Volts: this value validates not only the concept of the DT 2 but also the choice of the BCB as a good dielectric material for this termination.I.