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In this paper, we evidence the link between the planar and cylindrical junctionless field effect transistors (JL-FETs) from the electrostatics and current point of view. In particular, we show that an approximate solution of the Poisson-Boltzmann equation for JL nanowires can be mapped on the planar doublegate topology generating only negligible mismatch, meaning that both devices can share the same core model as far as long channels are considered. These preliminary results are a first step toward a unification of compact models for JL-FETs.Index Terms-Double gate (DG), enhancement mode, field effect transistor (FET), junctionless, modeling, nanowires (NWs).