International audienc

Tin oxide thin films doped with iron or copper were deposited on glass and porous alumina substrates, using the co-deposition dip coating sol-gel technique. Alumina substrate was prepared by the anodizing technique. Samples were sintered for 2 h at temperature 600°C. The XRD spectrum of deposited samples shows a polycrystalline structure with a clear characteristic peak of SnO 2 cassiterite phase. From (I-V) characteristics measured at different temperatures for samples prepared on glass substrates, the density of states at the Fermi level was calculated. Thermoelectric effect was measured with a change of temperature for prepared samples under low pressure 1 mbar. Seebeck coefficient, the carrier concentration, the charge carrier mobility and the figure merit were determined for prepared samples under low pressure 1 mbar. Seebeck coefficient was improved when films were deposited on porous Alumina substrates.

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