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Transmission ion channeling has been used to investigate the bonding geometry of Ge on the Si(100)-2 X 1 surface at a coverage of 0.6 ML. It is shown that this surface is terminated by asymmetric Ge-Ge dimers with a bond length of 2.6 A and a tilt of 12', in agreement with previous results. The structure of the surface is shown to vary with Ge coverage, which is possibly attributable to the strain induced during growth by the 4% lattice mismatch between Ge and Si.

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