ter. The major difficulty that we foresee with the practical applicability of this photoelectrochromic system is mainly twofold: (i) the dichotomous role of 02 in the bleachingrecoloration sequence, and (ii) time constraints associated with adsorption of the dye and desorption of the intermediate(s) generated upon UV excitation of the semiconductor. AcknowledgmentsThis study was funded in part by a grant from the Office of Basic Energy Sciences, U.S. Department of Energy The authors thank Dr. P V Kamat for several discussions and Sergio Tacconi for assistance with the graphics. We thank the two reviewers for constructive criticisms of an earlier version of this manuscript. ABSTRACT This paper describes the fabrication process for an interconnect technology in silicon systems. The process involves the electroplating of chemically etched through-holes in silicon substrates. These plated holes act as vias between the front and back sides of the substrate. This method can be used in high-density multilayer three-dimensional systems to minimize the delay times between chips. It can also be used in the packaging of silicon sensors to address the problem of system partitioning. We report via resistance in the order of mill, isolation resistance between 1 to 3 GIl, and capacitance less than 10 pE ABSTRACT This paper describes the fabrication process for an interconnect technology in silicon systems. The process involves the electroplating of chemically etched through-holes in silicon substrates. These plated holes act as vias between the front and back sides of the substrate. This method can be used in high-density multilayer three-dimensional systems to minimize the delay times between chips. It can also be used in the packaging of silicon sensors to address the problem of system partitioning. We report via resistance in the order of ml, isolation resistance between 1 to 3 GQ, and capacitance less than 10 pF ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-05-26 to IP e 1(') -Measured --2(') -Measured -·

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