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Using electron microscopy, atomic force microscopy, X-ray microanalysis, and IR spectroscopy, it was established that, in the regime of continuous laser irradiation of silicon at P = 170 W in different gaseous atmospheres with an oxygen impurity, SiOx composite films with a complex morphology form. The main components of ablation products are clusters that form during flight of ablation products and as a result of separation of SiOx-clusters from the zone of the irradiation channel. The roughness and density of the films depend on the heating temperature of the target surface and the type of deposited clusters

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