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All of the samples were prepared with about 47% volume of fill, 40% water, and 0.5% Sb203 in a 0.16-liter pressure vessel. Coating thickness was 0.340 ± 0.030 mil. Some of the tape properties not pertinent to the conclusions have been omitted. b In db below 1V, 600 SI

Films of As2Se3 and Sb2Se3 and their mixtures have been studied by electron microscopy and diffraction. On heating amorphous As2Se3 films no change occurs, but the Sb2Se3 films and mixtures of Sb2Se3 and As2Se3 transform to give small single crystals. These crystals have their c axes parallel to the substrate and give mainly (010) and (100) planes normal to the beam. Rate of nucleation is independent of temperature, indicating nucleation from predetermined nucleation centers. Growth rate increases with increasing temperature, but involves very little migration of material, implying that surface migration is very slow.

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